a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol test conditions minimum typical maximum units bv ces i c = 20 ma 40 v bv ebo i e = 1.0 ma 3.5 v i cbo v cb = 22 v 1.0 ma h fe v ce = 5.0 v i c = 200 ma 10 --- c ob v cb = 22 v f = 1.0 mhz 5 pf p g c v ce = 22 v p out = 3.0 w f = 2000 to 2300 mhz 8.0 8.5 45 db % npn silicon rf power transistor MRAL2023-3 package style .250 2l flg (c) 1 = collector 2 = base 3 = emitter description: the MRAL2023-3 is a common base device designed for class c amplifier applications in l-band fm microwave links. features include: ? gold metallization ? emitter ballasting ? input matching maximum ratings i c 0.5 a v ces 40 v p diss 10 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c jc 16 o c/w
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